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Porous silicon (PS) was successfully synthesized via novel integrated pulsed electrochemical etching of an n-type (100) silicon (Si) substrate under various condition. Adnan, The role of pulse time Toff on porous silicon as template for Au nanoparticles by using the integrated electrochemical technique, Physica B: Condensed Matter, 407 (2012), 4540-4544. Abstract: Magnesium oxide (Mg O) is a metal oxide which has many applications in industry and can be synthesized by many different synthesis methods.The PS was etched using hydrofluoric acid (HF) based solution and the porosity was optimized by introducing electroless chemical etching process prior to photo electrochemical (PEC) anodization. In this study, Mg O was synthesized by using two different methods which were sol-gel and solid-state reaction methods.
In the electroless etching, a delay time (T) of 2 min was applied. Both samples were annealed at 800 o C for 24 hours and characterized by using X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM).
After that a cycle time (T) and pause time () of pulsed current were supplied throughout the 30 min PEC etching process. The band gap energies for both samples were determined by using UV-Vis NIR Spectroscopy.
Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Haidian District, Beijing, P. China E-mail: [email protected] Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials.
Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous Ga N.A physical model based on band energy theory was developed to illustrate the origin of the photoresponse at 0 V in our device.Our findings provide a new route to realizing self-powered photodetectors.These Zn O photodetectors exhibit attractive photovoltaic characteristics at 0 V bias.More interestingly, with increasing the asymmetric ratio (the width of wide fingers : the width of narrow fingers) of the interdigitated electrodes, the responsivity of the Zn O self-powered UV photodetectors was enhanced obviously, reaching as high as 20 m A W when the asymmetric ratio was 20 : 1.The results show that dual-width structures can improve the incident light two times more than the single-width structures.The work also introduces a new method, which incorporates the current density of the device when calculating the overall current enhancement in order to model real performance more accurately.In addition, the impact of the period of the nanograting, single and dual-width structures, is examined as well.Then, a comparison is conducted between these types to determine the optimum periods. Integration of photonics in the back-end-of-line (BEOL) of a standard CMOS process enables the advantages of optical interconnects while benefiting from the low cost of monolithic integration. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. Silicon photonics has emerged as a leading technology to overcome the bandwidth and energy efficiency bottlenecks of standard metal interconnects.